Wide Variety of the PHI GENESIS Options for Research Needs
Battery (AES, Transfer Vessel)
“pA-AES lithium chemistry map from LiPON/LiCoO2 cross-section”.
Li-based materials, such as LiPON, are sensitive to electron beam irradiation.
The highly sensitive analyser available at PHI GENESIS enables rapid acquisition of chemical AES maps at low beam current (300 pA).
Semiconductor devices generally consist of complex thin films containing many elements. Their development often requires non-destructive analysis of the chemical states at the interfaces.
HAXPES is necessary to obtain information from hidden interfaces such as GaN under the gate oxide layer.
Organic Devices (UPS, LEIPS, GCIB)
The evolution of energy band diagram using UPS/ LEIPS and Ar-GCIB
(1) C60 film surface
(2) C 60 film after surface cleaning.
(3) C60 film /Au interface
(4) Au surface
Energy diagram of organic layers as a function of depth can be determined by combination of UPS/ LEIPS and Ar-GCIB depth profiling.
Micro Electronics (HAXPES)
Micro-spot solder-ball analysis
The HAXPES data shows a higher percentage of metallic Sn than the XPS data. This is consistent with the formation of surface oxides on the solder ball.