New XPS instrument PHI GENESIS released!

XPS and HAXPES combined in one multitechnique platform

ULVAC-PHI Incorporated (headquartered in Chigasaki, Kanagawa Prefecture, Japan) has launched the PHI GENESIS, an automated and multifunctional X-ray photoelectron spectrometer (XPS) or electron spectroscopy for chemical analysis (ESCA).

The PHI GENESIS XPS is a new product that combines PHI surface analysers with expansion capabilities, giving you mind-blowing basic performance in a compact package.

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What are the market needs?

Advanced materials such as solid-state batteries, advanced semiconductors and artificial photosynthesis are complex combinations of materials whose research and development requires rapid optimisation of the performance of each material as well as the combinations of materials. There is a growing need for powerful and highly functional surface and interface analysis that can significantly accelerate this research and development.

With the PHI GENESIS, we offer you a new surface analysis system that provides not only extremely high basic performance, but also a high level of automation to meet your individual requirements.

The best solution for you: The new scanning X-ray photoelectron spectrometer (XPS) PHI GENESIS from ULVAC-PHI.


Fully automated Multi-tech XPS / HAXPES

  • Easy Operation & Multi-technique Options
  • High Performance Large & Micro Area XPS Analysis
  • High Speed & Non-Destructive Depth Profiling
  • Fully Automated with Sample Parking
  • Hard X-ray Cr Kα source for HAXPES
  • Comprehensive solution for batteries, semiconductors, organic devices and other applications
Explore GENESIS Specifications

Your advantages

Simple operation
Intuitive user interface (UI)

PHI GENESIS offers you a simple, intuitive and easy-to-use user interface experience

Multi-technology options
No compromise solution

With powerful XPS, HAXPES, UPS, LEIPS, REELS, AES and a variety of other options, we meet all your surface analysis needs

High throughput large area analysis – enhanced scanning X-ray imaging (SXI)

The unsurpassed 5 µm X-ray beam with a small spot opens up new possibilities for micro-XPS applications

High-throughput depth profiling – High performance depth profiling

Sample: Au ion-implanted Si wafer with up to 10 ppm Au detected during depth profiling

Non-destructive depth profiling – Sputter-free depth probing

By using a high-energy hard X-ray source, we enable you to obtain information from a greater depth than with conventional soft X-ray XPS

What challenges do you want to solve?

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Application areas

  • Semiconductors
  • Batteries
  • Organic devices
  • Catalysts
  • Quantum dots
  • Nanoparticles
  • Bio and life science materials
  • Polymers
  • Ceramics
  • Metals
  • and other solid materials and devices

Easy operation

PHI GENESIS offers a new user interface that provides intuitive, simple and fully automated operation of the high-performance instrument.

This interface allows access to all necessary functions for setting up routine and advanced multi-technique acquisitions within a single screen. Features such as navigation using the intro photo and 100% accurate positioning from X-ray induced secondary electron images (SXI) are retained.

Multi-technique options

PHI GENESIS offers automated analysis on the same surface using multiple techniques covering the entire energy range – from conduction band with LEIPS to core-level excitation with HAXPES. PHI GENESIS thus offers unprecedented added value not found in conventional XPS instruments.

High Throughput Large Area Analysis

– Automated transfer of samples from intro to analysis chamber

– Three sample holders can be used at the same time

– 80 x 80 mm large sample holder is available for high throughput

– Can analyze a variety of sample types – powders, rough textures, insulators, large or oddly shaped samples

Superior Micro Area Spectroscopy
≤ 5 μm X-ray spot

In PHI GENESIS, micro-focused scanning X-ray source is used for intuitive SEM- like navigation using X-ray induced secondary electron images (SXIs). Multi- point small areas can be defined from SXI images with 100% certainty for spectra, depth profiles and maps.

High Throughput Depth Profiling

PHI GENESIS enables high throughput depth profiling. Micro-focused X-ray source, highly sensitive detector, high-performance Argon ion gun, and high-efficiency dual beam neutralization enable fully automated depth profiling, including multi-point analysis within a single crater.

High performance depth profiling

(Left) A depth profile of a thin film All-solid-state battery. Depth profiling to a depth below 2.0 µm clearly shows the existence of the Li-rich interface.

(Right) At the initial stage of LiPON film deposition, it was suggested that oxygen was incorporated from LiCoO2 layer to LiPON layer, to stimulate Co reduction from oxide to metal at the Li-rich interface of LoCoO2 layer.

Non Destructive Depth Profiling

Using high-energy hard X-ray source, it is possible to obtain information from a deeper depth compared to conventional soft X-ray XPS.

This enables a detailed and unperturbed chemical state analysis of buried interfaces without sputtering.

No-sputter depth probing

Quantum Dots (QDs) with a diameter of approximately 10 to 50 nm are used in a next-generation transparent luminescent materials.

By combining information from same area analysis using XPS (Al Kα X-rays) and HAXPES (Cr Kα X-rays), it is possible to perform detailed depth-resolved structure analysis of QDs.

Combination of XPS and HAXPES allows depth-resolved, quantitative and chemical analysis of nanoparticles, eliminating possible ion beam-induced damage.

Are you interested in the possible additional accessories?

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Wide Variety of the PHI GENESIS Options for Research Needs

Battery (AES, Transfer Vessel)

“pA-AES lithium chemistry map from LiPON/LiCoO2 cross-section”.

Li-based materials, such as LiPON, are sensitive to electron beam irradiation.

The highly sensitive analyser available at PHI GENESIS enables rapid acquisition of chemical AES maps at low beam current (300 pA).

Semiconductor (HAXPES)

Semiconductor devices generally consist of complex thin films containing many elements. Their development often requires non-destructive analysis of the chemical states at the interfaces.

HAXPES is necessary to obtain information from hidden interfaces such as GaN under the gate oxide layer.

Organic Devices (UPS, LEIPS, GCIB)

The evolution of energy band diagram using UPS/ LEIPS and Ar-GCIB

(1) C60 film surface

(2) C 60 film after surface cleaning.

(3) C60 film /Au interface

(4) Au surface

Energy diagram of organic layers as a function of depth can be determined by combination of UPS/ LEIPS and Ar-GCIB depth profiling.

Micro Electronics (HAXPES)

Micro-spot solder-ball analysis

The HAXPES data shows a higher percentage of metallic Sn than the XPS data. This is consistent with the formation of surface oxides on the solder ball.

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Physical Electronics GmbH
Salzstraße 8
85622 Feldkirchen near Munich

Telephone: +49 89 96275 0

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